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In the quest for novel, scalable and energy-efficient computing technologies,many non-charge based logic devices are being explored. Recent advances inmulti-ferroic materials have paved the way for electric field induced lowenergy and fast switching of nano-magnets using the magneto-electric (ME)effect. In this paper, we propose a voltage driven logic-device based on the MEinduced switching of nano-magnets. We further demonstrate that the proposedlogic-device, which exhibits decoupled read and write paths, can be used toconstruct a complete logic family including XNOR, NAND and NOR gates. Theproposed logic family shows good scalability with a quadratic dependence ofswitching energy with respect to the switching voltage. Further, the proposedlogic-device has better robustness against the effect of thermal noise ascompared to the conventional current driven switching of nano-magnets. Adevice-to-circuit level coupled simulation framework, including magnetizationdynamics and electron transport model, has been developed for analyzing thepresent proposal. Using our simulation framework, we present energy and delayresults for the proposed Magneto-Electric Spin Logic (MESL) gates.

MESL: Proposal for a Non-volatile Cascadable Magneto-Electric Spin Logic