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We address the production of indium nanoparticles (In NPs) from In thin filmsthermally evaporated on both c-Si substrates and sputtered indium tin oxide(ITO) as well as from sputtered ITO thin films, exposed to a hydrogen (H2)plasma. On the one hand, we show that evaporated In thin films grow inVolmer-Weber (VW) mode; H2 plasma reduces their surface oxide and substrateannealing reshapes them from flat islands into spheres, without any remarkablesurface migration or coalescence. On the other hand, we studied the In NPsformation on the ITO thin films and on In/ITO bilayer structures, by varyingthe H2 plasma exposure time and the substrate temperature. This led us topostulate that the main role of H2 plasma is to release In atoms from ITOsurface. At low substrate temperature (100{\deg}C), In NPs grow on ITO surfacevia a solid phase VW mode, similar to evaporated In thin films, while at300{\deg}C, small In droplets preferentially nucleate along the ITO grainboundaries where ITO reduction rate and atomic diffusion coefficient are highercompared with the ITO grain surface. As the droplets grow larger and connectwith each other, larger ones (1-2 um microns) are suddenly formed based on aliquid phase growth-connection-coalescence process. This phenomenon is evenstronger in the case of In/ITO bilayer where the large In drops resulting fromthe evaporated In connect with the smaller NPs resulting from ITO reduction andrapidly merge into very large NPs (15 um)

Hydrogen plasma exposure of In/ITO bilayers as an effective way for dispersing In nanoparticles