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Planar channeling of 855 MeV electrons and positrons in straight and benttungsten (110) crystal is simulated by means of the \MBNExplorer softwarepackage. The results of simulations for a broad range of bending radii areanalyzed in terms of the channel acceptance, dechanneling length, and spectraldistribution of the emitted radiation. Comparison of the results withpredictions of other theories as well as with the data for (110) orienteddiamond, silicon and germanium crystals is carried out.

Channeling and Radiation of 855 MeV Electrons and Positrons in Straight and Bent Tungsten (110) Crystals