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Topological states of matter originate from distinct topological electronicstructures of materials. As for strong topological insulators (STIs), thetopological surface (interface) is a direct consequence of electronic structuretransition between materials categorized to different topological genus.Therefore, it is fundamentally interesting if such topological character can bemanipulated. Besides tuning the crystal field and the strength of spin-orbitalcoupling (e.g., by external strain, or chemical doping), there is currentlyrare report on topological state induced in ordinary insulators (OIs) by theheterostructure of OI/STI. Here we report the observation of a Dirac conetopological surface state (TSS) induced on the Sb2Se3 layer up to 15 nm thickin the OI/STI heterostructure, in sharp contrast with the OI/OI heterostructurewhere no sign of TSS can be observed. This is evident for an inducedtopological state in an OI by heterostructure.

Induced robust topological order on an ordinary insulator hetero-structured with a strong topological insulator