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The memristor is the fundamental non-linear circuit element, with uses incomputing and computer memory. ReRAM (Resistive Random Access Memory) is aresistive switching memory proposed as a non-volatile memory. In this review weshall summarise the state of the art for these closely-related fields,concentrating on titanium dioxide, the well-utilised and archetypal materialfor both. We shall cover material properties, switching mechanisms and modelsto demonstrate what ReRAM and memristor scientists can learn from each otherand examine the outlook for these technologies.

TiO$_2$-based Memristors and ReRAM: Materials, Mechanisms and Models (a Review)