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We apply hard X-ray photoelectron spectroscopy (HAXPES) to investigate theelectronic structures in ~50-nm thick epitaxial GaP layers grown on Si(001)under different conditions. Depth profiles of the local binding energies forthe core levels are obtained by measuring the photoemission spectra atdifferent incident photon energies between 3 and 7 keV and analyzing them withsimple numerical models. The obtained depth profiles are in quantitativeagreement with the band bending determinations for the same samples in aprevious coherent phonon spectroscopic study. Our results demonstrate theapplicability of the HAXPES with varying incident photon energy to characterizethe electric potential profiles at buried semiconductor heterointerfaces.

Direct Characterization of Band Bending in GaP/Si(001) Heterostructures with Hard X-ray Photoelectron Spectroscopy