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We demonstrate rapid deterministic (seeded) growth of large single-crystalsof graphene by chemical vapour deposition (CVD) utilising pre-patterned coppersubstrates with chromium nucleation sites. Arrays of graphene single-crystalsas large as several hundred microns are grown with a periodicity of up to 1 mm.The graphene is transferred to target substrates using aligned andcontamination-free semi-dry transfer. The high quality of the synthesisedgraphene is confirmed by Raman spectroscopy and transport measurements,demonstrating room-temperature carrier mobility of 21 000 cm2 / V s whentransferred on top of hexagonal boron nitride. By tailoring the nucleation oflarge single-crystals according to the desired device geometry, it will bepossible to produce complex device architectures based on single-crystalgraphene, thus paving the way to the adoption of CVD graphene in wafer-scalefabrication.

Deterministic patterned growth of high-mobility large-crystal graphene: a path towards wafer scale integration