English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Plus monthly

Global: Zendy Tools annual

Global: Zendy Tools monthly

Global: Zendy Free Plan

New configuration of confinement structure is utilized to improveoptoelectronic performances, including threshold current, AC current gain aswell as optical bandwidth and optical output power of single quantum welltransistor laser. Considering the drift component in addition to the diffusionterm in electron current density, a new continuity equation is developed toanalyze the proposed structures. Physical parameters including, electronmobility, recombination lifetime, optical confinement factor, electron capturetime and photon lifetime is calculated for new structures. Based on solvingcontinuity equation in separate confinement heterostructures, threshold currentreduces 67% and optical output power increases 37%.

Graded index SCH transistor laser: Analysis of various confinement structures