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This study addresses high electric field transport in multilayer blackphosphorus (BP) field effect transistors (FETs) with self-heating and thermalspreading by dielectric engineering. Interestingly, we found that multilayer BPdevice on a SiO2 substrate exhibited a maximum current density of 3.3 x 10E10A/m2 at an electric field of 5.58 MV/m, several times higher than multilayerMoS2. Our breakdown thermometry analysis revealed that self-heating was impededalong BP-dielectric interface, resulting in a thermal plateau inside thechannel and eventual Joule breakdown. Using a size-dependent electro-thermaltransport model, we extracted an interfacial thermal conductance of 1-10 MW/m2K for the BP-dielectric interfaces. By using hBN as a dielectric material forBP instead of thermally resistive SiO2 (about 1.4 W/m K), we observed a 3 foldincrease in breakdown power density and a relatively higher electric fieldendurance together with efficient and homogenous thermal spreading because hBNhad superior structural and thermal compatibility with BP. We further confirmedour results based on micro-Raman spectroscopy and atomic force microscopy, andobserved that BP devices on hBN exhibited centrally localized hotspots with abreakdown temperature of 600K, while the BP device on SiO2 exhibited a hotspotin the vicinity of the electrode at 520K.

High Electric Field Carrier Transport and Power Dissipation in Multilayer Black Phosphorus Field Effect Transistor with Dielectric Engineering