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Tin doped indium oxide (ITO) thin films are being used extensively astransparent conductors in several applications. In the present communication,we report the electrical transport in DC magnetron sputtered ITO thin films inlow temperatures (25-300 K). The low temperature Hall effect and resistivitymeasurements reveal that the ITO thin films are moderately dis-ordered (kfl~1)and degenerate semiconductor. The transport of charge carriers in thesedisordered ITO thin films takes place via the de-localized states. The disordereffects lead to the well- known metal-insulator transition; this transition isobserved at 110 K in ITO thin films. The metal-insulator behaviour is explainedby the quantum correction to the conductivity (QCC); this approach is based onthe quantum-mechanical interference effects in the disordered systems. Theinsulating behaviour is attributed to the combined effect of the weaklocalization and the electron-electron interactions.

Metal Insulator transition in tin doped indium oxide (ITO) thin films Quantum Correction to the electrical Conductivity