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Side and top silicon nitride stressors were proposed and shown to beeffective ways to reduce the threshold current Ith and improve the wall-plugefficiency {\eta}wp of Ge-on-Si lasers. Side stressors only turned out to be amore efficient way to increase {\eta}wp than using top and side stressorstogether. With the side stressors only and geometry optimizations, a {\eta}wpof 30.5% and an Ith of 50 mA (Jth of 37 kA/cm2) can be achieved with the defectlimited carrier lifetime of 1 nsec. With the defect limited carrier lifetime of10 nsec, an Ith of 7.8 mA (Jth of 5.8 kA/cm2) and a wall-plug efficiency of38.7% can be achieved. These are tremendous improvements from the case withoutany stressors. These results give strong support to the Ge-on-Si lasertechnology and provide an effective way to improve the Ge laser performance.

Stress engineering with silicon nitride stressors for Ge-on-Si lasers