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We report on composition controlled MoS$_{2}$ and MoO$_{x}$ (x=2 and 3)compounds electrodeposited on Flourine dopped Tin Oxide (FTO) substrate. It wasobserved that the relative content has systematic electrical and opticalchanges for different thicknesses of layers ranging from $\approx$20 to 540 nm.Optical and electrical bandgaps reveals a tuneable behavior by controlling therelative content of compounds as well as a sharp transition from p to n-type ofsemiconductivity. Moreover, spin-orbit interaction of Mo 3d doublet enhances byreduction of MoO$_{3}$ content in thicker films. Our results convey path-way ofapplying such compounds in optoelectronics and nanoelectronics devices.

Tunable bandgap and spin-orbit coupling by composition control of MoS$_{2}$ and MoO$_{x}$ (X=2 and 3) compounds