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The AB-stacked bilayer graphene (BLG) is a pure semiconductor whose band gapand properties can be tuned by various methods such as doping or applying gatevoltage. Here we show an alternative method to control the electronicproperties of BLG; intercalation of transition metal atoms between the twomonolayers graphene (MLG). A theoretical investigation has been performed ontwo-dimensional MLG, BLG, BLG-intercalated nanostructured materials, all ofwhich are energetically stable. Our study reveals that only MLG andBLG-intercalated with one Vanadium (V) atom (BLG-1V) materials have a DiracCone at the K-point. This study reveals a new strategy to control the materialproperties of BLG to exhibit various behaviors, including: metallic,semi-metallic, and semiconducting by varying the concentration and spinarrangement of the V atoms in BLG. In all the cases, the present DFTcalculations show that the 2p$_z$ sub-shells of C atoms in graphene and the3d$_{yz}$ sub-shells of the V atoms provide the electron density near the Fermilevel controlling the material properties of the BLG-intercalated materials.Thus we prove that out-of-plane atoms can influence in plane electronicdensities in BLG.

An Alternative Strategy to Control the Electronic Properties of Bilayer Graphene: Semi-metal to Metal Transition and a 2D Material with Dirac Cone