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Straintronic magneto-tunneling junction (s-MTJ) switches, whose resistancesare controlled with voltage-generated strain in the magnetostrictive free layerof the MTJ, are extremely energy-efficient switches that would dissipate a fewaJ of energy during switching. Unfortunately, they are also relativelyerror-prone and have low resistance on/off ratio. This suggests that ascomputing elements, they are best suited for non-Boolean architectures. Here,we propose and analyze a ternary content addressable memory implemented withs-MTJs and some transistors. It overcomes challenges encountered by traditionalall-transistor implementations, resulting in exceptionally high cell density.

Straintronic magneto-tunneling-junction based ternary content addressable memory