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We investigated 10 to 200 nm thick black phosphorus flakes on SiO2/Si andpolyimide substrates by Angle-resolved Polarized Raman spectra (ARPRS) using442 nm excitation wavelength. The results revealed that ARPRS with 442 nmexcitation can provide unambiguous, convenient, non-destructive and fastdetermination of BP's crystallographic orientation. The substrate and thicknessdependencies of Raman spectra and Raman tensor elements were studied. Thesedependencies were shown to be influenced by Raman excitation laser heatingeffect. By comparing with in-situ Raman measurements at elevated temperatures,we were able to quantify the laser-heating effect, which is significant andhard to avoid for Raman measurements of BP on polyimide substrates due to thepoor thermal conductivity of the substrate. Thermal processing by substrateheating was shown to have a significant impact on BP on SiO2/Si substrate, butnot for BP on polyimide due to smaller thermal expansion mismatch. Our resultsgive important insights on Raman Spectroscopy characterizations of BP ondifferent substrates.

Study of Black Phosphorus Using Angle-Resolved Polarized Raman Spectroscopy with 442 nm Excitation