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Spatial confinement and manipulation of charged carriers in semiconductingnanostructures are essential for realizing quantum electronic devices.Gate-defined nanostructures made of two-dimensional (2D) semiconductingtransition metal dichalcogenides (TMDCs) have the potential to add a uniqueadditional control of quantum degrees of freedom owing to valley-spin lockingof confined carriers near the band edges. However, due to prevailinginhomogeneities in the conducting channels, it has been difficult to realizequantum confinement in 2D TMDCs with well-controlled tunnel-coupling strength.Here we demonstrate quantum transport in lateral gate-defined 2D electronquantum dots formed in atomically thin TMDC heterostructures. Utilizingmicro-fabricated local contact gates, encapsulation in 2D dielectrics and lightillumination at low temperatures, we show that the quality of TMDC 2D electrongases (2DEGs) can be improved, rendering them suitable for mesoscopic quantumtransport measurements. We observe quantized conductance in quantum pointcontact (QPC) channels controlled by gate-tunable confinement. We alsodemonstrate single electron transport in TMDC quantum dots (QD) with tunabletunnel-coupling. Our observation holds promise for the quantum manipulation ofspin and valley degrees of freedom in engineered TMDC nanostructures, enablingversatile 2D quantum electronic devices.

Engineering Quantum Confinement in Semiconducting van der Waals Heterostructure