English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Zendy Plus

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Zendy Tools

Zendy Open

GaP/Si(100) is considered as pseudomporphic virtual substrate for III/V-on-Siintegration in order to reduce defects related to polar-on-nonpolarheteroepitaxy. The atomic structure of the GaP/Si(100) heterointerface isdecisive to yield low defect densities and its dependence on nucleationconditions is still under debate. Recently, Beyer et al. suggested theformation of a 'pyramidal' structure as a general mechanism atpolar-on-nonpolar interfaces [A. Beyer et al., Chem. Mat. 28, 3265 (2016)].However, their DFT studies neglected the dependence of the calculatedinterfacial energies on appropriate chemical potentials and their findings arecontradictory to recent and past experimental data.

Comment on pyramidal structure formation at the interface between III/V semiconductors and silicon