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In the present work, Cs aberration corrected and monochromated scanningtransmission electron microscopy electron energy loss spectroscopy STEM-EELShas been used to explore experimental set-ups that allows bandgaps of highrefractive index materials to be determined. Semi-convergence and -collectionangles in the micro-radian range were combined with off-axis or dark field EELSto avoid relativistic losses and guided light modes in the low loss range tocontribute to the acquired EEL spectra. Off-axis EELS further suppressed thezero loss peak and the tail of the zero loss peak. The bandgap of severalGaAs-based materials were successfully determined by direct inspection andwithout any background subtraction of the EEL spectra. The presented set-updoes not require that the acceleration voltage is set to below the Cerenkovlimit and can be applied over the entire acceleration voltage range of modernTEMs and for a wide range of specimen thicknesses.

Bandgap measurement of high refractive index materials by off-axis EELS