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Structural, resistivity, thermoelectric power and magneto-transportproperties of Cu doped Bi2Te3 topological insulators have been investigated.The occurrence of the tuning of charge carriers from n type to p type by Cudoping at Te sites of Bi2Te3 is observed both from Hall effect andthermoelectric power measurements. Carrier mobility decreases with the dopingof Cu which provides evidence of the movement of Fermi level from bulkconduction band to the bulk valence band. Thermoelectric power alsoincreaseswith doping of Cu.Moreover linear magnetoresistance (LMR) has beenobserved at high magnetic field in pure Bi2Te3 which is associated to thegapless topological surface states protected by time reversal symmetry (TRS),whereas doping of Cu breaks TRS and an opening of band gap occurs whichquenches the LMR.

Change-over of carrier type and magneto-transport property in Cu doped Bi2Te3 Topological Insulators