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We have studied intrinsic defect complexes in In$_2$O$_3$ using ab initiorandom structure searching (AIRSS). Our first-principlesdensity-functional-theory calculations predict the thermodynamic stability ofseveral novel defect structures. We combine the static lattice energy andharmonic vibrational energy with the often-neglected configurational entropy toconstruct the free energy, which is minimised to predict defect abundances atfinite temperatures. We predict that some of our new defect structures - inparticular our {In,2V$_\mathrm{O}$} and {2In,3V$_\mathrm{O}$} defects - canexist in significant abundances at finite temperatures, and their densities ofelectronic states indicate that they could play an important role in theunexpectedly high density of n-type charge carriers observed in In$_2$O$_3$.

Structures and finite-temperature abundances of defects in In$_2$O$_3$-II from first-principles calculations