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Graphene, as an atomic-thick ultrasoft membrane, almost has no resistanceagainst out-of-plane deformations and, therefore, it is always wrinkled to acertain degree. Recently, corrugated structures and their effects on theelectronic properties of monolayer graphene have been studied extensively.However, similar experimental studies in bilayer graphene have yet to bereported. Here, we show that corrugations in bilayer graphene can generateincommensurate stacking solitons (domain walls) between commensurateBernal-stacked domains. By using scanning tunneling microscopy, wemicroscopically study electronic structures of a corrugation-induced stackingsoliton that separates two adjacent AB and BA stacked bilayer regions with auniform interlayer potential difference. Both topological gapless edge statesand quasi-localized gapped quantum-well-like states are observed in thenanoscale corrugation. Atomic resolution mapping of the topological edge statesalong the stacking soliton reveals the existence of intervalley scatteringbetween them, which could explain recent experiments where the conductancealong domain walls of gapped graphene bilayer is smaller than a quantized value4e2 h.

Corrugation induced stacking solitons with topologically confined states in gapped bilayer graphene