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Metal-nanoclusters (NC), deposited by magnetron-based nanocluster sourcecoupled with quadrupole mass filter (QMF) assembly having independent controlover its size and density, are used in fabricating NC-based non-volatile memory(NVM) devices. The effect of diameter and density on the NVM charge storagecharacteristics are presented where Ag is used as the metal NC. The Ag-NC,sandwiched between HfO$_2$ tunnel and control oxides, is deposited by using thecombination of the above two instruments. No annealing is performed at anystage of the device fabrication. The largest hysteresis loop area in thecapacitance-voltage ($C-V$) characteristics of metal-oxide-semiconductor (MOS)characteristics is observed for a cluster density of 1 $\times$ 10$^{11}$cm$^{-2}$. Further, an NC size dependent hysteresis loop area is observed withthe MOS devices where the NC diameter is varied from 3 to 1.5 nm keeping the NCdensity at 1 $\times$ 10$^{11}$ cm$^{-2}$. The device performance is found tobe improved with a reduction of the NC size and shows its best with the NCdiameter of 1.5 nm. The storage time of the NVM devices also increases with thedecrease in the NC diameter and exhibits their best performances for the NCswith a diameter of 1.5 nm.

Size and density controlled metal nanocluster embedded metal-oxide-semiconductor structure for memory applications