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Clarification of the position of the Fermi level ($E_\mathrm{F}$) isimportant in understanding the origin of ferromagnetism in the prototypicalferromagnetic semiconductor Ga$_{1-x}$Mn$_x$As (GaMnAs). In a recentpublication, Souma $et$ $al$. [Sci. Rep. $\mathbf{6}$, 27266 (2016)], haveinvestigated the band structure and the $E_\mathrm{F}$ position of GaMnAs usingangle-resolved photoemission spectroscopy (ARPES), and concluded that$E_\mathrm{F}$ is located in the valence band (VB). However, this conclusioncontradicts a number of recent experimental results for GaMnAs, which showedthat $E_\mathrm{F}$ is located above the VB maximum in the impurity band (IB).Here, we show an alternative interpretation of their ARPES experiments, whichis consistent with those recent experiments and supports the picture that$E_\mathrm{F}$ is located above the VB maximum in the IB.

Alternative interpretation of the recent experimental results of angle-resolved photoemission spectroscopy on GaMnAs [Sci. Rep. 6, 27266 (2016)]