English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Plus monthly

Global: Zendy Tools annual

Global: Zendy Tools monthly

Global: Zendy Free Plan

Aluminum oxide thin films were deposited on silicon substrates underdifferent deposition conditions using pulse pressure metal organic chemicalvapour deposition (PP-MOCVD). The current study investigates into the growthmechanism of the deposited film and the control of the film morphology byvarying the processing parameters of PP-MOCVD - choice of solvent,concentration, and presence of a shield. Aluminum sec-butoxide (ASB) was usedas the aluminum source while hexane and toluene were used as the solvents. Thefilms were deposited at 475oC at different precursor concentrations. It wasobserved that the choice of solvent has no effect on the surface morphology,but it influenced the deposition rate. The improved deposition rate, relativelyclose enthalpy of vaporisation ({\Delta}H) values and uniformity of the film,irrespective of the growth conditions, showed that hexane was a better solventfor ASB than toluene. A hybrid mode of vapour deposition and vapourcondensation model for thin film growth is proposed where five differentmechanisms lead to a solid film formation. These include vapour phasedeposition under low arrival rate, vapour phase deposition under high arrivalrate, Leidenfrost aerosol formation, heterogeneous particle formation andliquid droplet impingement. The important parameter that needs to be controlledis the precursor flux arrival rate which can be controlled by varying theprecursor concentration, use of a solvent with a low {\Delta}H and the presenceof a shield over the substrate, which influences the surface morphology and thegrowth rate of the films.

A study on the growth mechanism and the process parameters controlling aluminum oxide thin films deposition by pulsed pressure MOCVD