English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Plus monthly

Global: Zendy Tools annual

Global: Zendy Tools monthly

Global: Zendy Free Plan

The electronic, phonon, and thermoelectric properties of a two-dimensionalHfS2 monolayer are investigated by using the first-principles calculationscombined with the Boltzmann transport theory. The band valleys of the HfS2monolayer can be effectively tuned by the applied biaxial strain. The Seebeckcoefficient and therefore the peak value of the power factor (with therelaxation time inserted) increase when the degeneracy of the band valleys isincreased by the strain. When no strain is applied, the HfS2 monolayer is anexcellent n-type thermoelectric material, while the thermoelectric performanceof the p-type doped one is poor. The applied tensile strain of 6% can increasethe room-temperature ZT value of the p-type doped system to 3.67, which is fivetimes larger than that of the unstrained one. The much more balanced ZT valuesof the p- and n-type doping are favorable for fabrication of both p- and n-legsof thermoelectric modules. Our results indicate that the thermoelectricperformance of the HfS2 monolayer can be greatly improved by the valleyengineering through the method of strain.

Enhancing the thermoelectric performance of a HfS2 monolayer through valley engineering