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Hexagonal boron nitride (hBN) is a wide bandgap van der Waals material thathas recently emerged as promising platform for quantum photonics experiments.In this work we study the formation and localization of narrowband quantumemitters in large flakes (up to tens of microns wide) of hBN. The emitters canbe activated in as-grown hBN by electron irradiation or high temperatureannealing, and the emitter formation probability can be increased by ionimplantation or focused laser irradiation of the as-grown material.Interestingly, we show that the emitters are always localized at edges of theflakes, unlike most luminescent point defects in 3D materials. Our resultsconstitute an important step on the road map of deploying hBN in nanophotonicsapplications.

Engineering and localization of quantum emitters in large hexagonal boron nitride layers