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The electrical performance of two dimensional transitional metaldichalcogenides (TMDs) is strongly influenced by the amount of structuraldefects inside. In this work, we provide an optical spectroscopiccharacterization approach to correlate the amount of structural defects and theelectrical performance of WSe2 devices. Low temperature photoluminescence (PL)spectra of electron beam lithography (EBL) processed WSe2 presents a cleardefect-induced PL emission due to excitons bound to defects, which wouldstrongly degrade the electrical performance. By adopting an e-beam-freetransfer-electrode technique, we are able to prepare backgated WSe2 device withlimited amount of defects. A maximum hole-mobility of about 200 cm2/Vs wasachieved due to reduced scattering sources, which is the highest reported valueamong its type. This work would not only provide a versatile and nondestructivemethod to monitor the defects in TMDs, but also a new route to approach theroom temperature phonon-limited mobility in high performance TMDs devices.

Defects as a factor limiting carrier mobility in WSe2: a spectroscopic investigation