English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Plus monthly

Global: Zendy Tools annual

Global: Zendy Tools monthly

Global: Zendy Free Plan

Here we perform a series of time-resolved experiments where a 100 fs pumppulse is tuned between 528 nm and 555 nm, across the second indirect gap ofintrinsic silicon at ~540 nm which involves electrons in a higher-lyingconduction band with minimum at the L point. The photo-injected carriers, afterinter- and intra-band relaxations are complete, are subsequently probed withhigh-field single-cycle terahertz radiation. When the energy of the pump pulsesexceeds the second indirect gap, the probed terahertz absorption decreases by afactor 2.7$\pm$0.2. We suggest that this dramatic change could be due to thedifferent phonon populations obtained when the carriers undergo the L to Xinter-band scattering, instead of just cooling within the X-valley.

Transient THz conductivity of silicon with optical pumping above and below the second indirect transition