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By using the full potential linear augmented plane wave (FP-LAPW) method andfull potential local orbital minimum basis (FP-LOMB) method within generalizedgradient approximation (GGA), we studied the electronic structures and magneticproperties of nickel and chromium single dopants in polytypes of siliconcarbide (SiC). The magnetic phases of defects are found to be stronglydependent on the external stress on the supercell. In 3C-SiC, the Ni singledopant exhibits an anti-ferromagnetic (AFM) to ferromagnetic (FM) transition ata moderate compressive and tensile hydrostatic strain in Si-sub and C-subcases. In contrast, the Ni single dopant in 4H-SiC is stably in the nonmagneticphase under external stress. The Cr single dopant is also insensitive to theapplied stress but stably in the magnetic phase. This strain controlledmagnetic transition makes the Ni single dopant a novel scheme of qubit.

Strain-based Spin Manipulation on Substitutional Nickel in Silicon Carbide