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We assess independently the impact of high-temperature substrate annealingand metal deposition conditions on the coherence of transmon qubits in thestandard 2D circuit-QED architecture. We restrict our study to devices madewith aluminum interdigital capacitors on sapphire substrates. We record morethan an order-of-magnitude improvement in the relaxation time of devices madewith an annealed substrate, independent of whether a conventional evaporator ormolecular beam epitaxy chamber was used to deposit the aluminum. We also infersimilar levels of flux noise and photon shot noise through dephasingmeasurements on these devices. Our results indicate that substrate annealingplays a primary role in fabricating low-loss qubits, consistent with thehypothesis that substrate-air and substrate-metal interfaces are essentialfactors limiting the qubit lifetimes in superconducting circuits.

Improved superconducting qubit coherence with high-temperature substrate annealing