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The transfer of graphene grown by chemical vapor deposition (CVD) usingamorphous polymers represents a widely implemented method for graphene-basedelectronic device fabrication. However, the most commonly used polymer,poly(methyl methacrylate) (PMMA), leaves a residue on the graphene that limitsthe mobility. Here we report a method for graphene transfer and patterning thatemploys a perfluoropolymer---Hyflon---as a transfer handle and to protectgraphene against contamination from photoresists or other polymers. CVD-growngraphene transferred this way onto LaAlO$_3$/SrTiO$_3$ heterostructures isatomically clean, with high mobility (~30,000 cm$^2$V$^{-1}$s$^{-1}$) near theDirac point at 2 K and clear, quantized Hall and magneto-resistance. Localcontrol of the LaAlO$_3$/SrTiO$_3$ interfacial metal-insulatortransition---through the graphene---is preserved with this transfer method. Theuse of perfluoropolymers such as Hyflon with CVD-grown graphene and other 2Dmaterials can readily be implemented with other polymers or photoresists.

Method for Transferring High-Mobility CVD-Grown Graphene with Perfluoropolymers