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We consider the electron transport in the Datta-Das spin transistor withinthe two-subband model taking into account the intra- and inter-subbandspin-orbit (SO) interaction and study the influence of the inter-subband SOcoupling on the spin-transistor operation. Starting from the model, in whichthe SO coupling constants are treated as parameters, we show that theinter-subband SO interaction strongly affects the ordinary conductanceoscillations predicted for the transistor with the single occupancy.Interestingly, we find that even in the absence of the intra-subband SOinteraction, the conductance oscillates as a function of the inter-subband SOcoupling constant. This phenomenon is explained as resulting from theinter-subband transition with spin-flip. Next, we consider the realistic spintransistor model based on the gatedAl$_{0.48}$In$_{0.52}$As/Ga$_{0.47}$In$_{0.53}$As double quantum well, forwhich the SO coupling constants are determined by the Schr\"{o}dinger-Poissonapproach. We show that the SO coupling constants rapidly change around $V_g=0$,which is desirable for the spin transistor operation. We demonstrate that forhigh electron densities the inter-subband SO interaction starts to play thedominant role. The strong evidence of this interaction is the reduction of theconductance for gate voltage $V_g=0$, which leads to the reduction of theon/off conductance ratio.

Effect of the inter-subband spin-orbit interaction on the spin transistor operation