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The design of a 1 micrometer gate length depletion-mode InSb quantum-wellfield-effect transistor (QWFET) with a 10 nm-thick Al2O3 gate dielectric hasbeen optimized using a quantum corrected self-consistent Schrodinger-Poisson(QCSP) and two dimensional drift-diffusion model. The model predicts a veryhigh electron mobility of 4.42 m2V-1s-1 at Vg= 0V, a small pinch off gatevoltage (Vp) of -0.25V, a maximum extrinsic transconductance (gm) of 4.94 S/mmand a drain current density of more than 6.04 A/mm. A short-circuitcurrent-gain cut-off frequency (fT) of 374 GHz and a maximum oscillationfrequency (fmax) of 645 GHz are predicted for the device. These characteristicsmake the device a potential candidate for low power, high-speed logicelectronic device applications.

Design and Performance Analysis of Depletion-Mode InSb Quantum-Well Field-Effect Transistor for Logic Applications