English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Plus monthly

Global: Zendy Tools annual

Global: Zendy Tools monthly

Global: Zendy Free Plan

GaSb/InAs/GaSb layer stacks have been grown on InAs metamorphic substrates(pseudosubstrates) by MOVPE, using nitrogen as major carrier gas. Wedemonstrate that GaSb growth by nitrogen MOVPE on InAs metamorphic substrates(and on InAs wafers) is possible in a very narrow range of growth parameters.As demonstrators, GaSb/InAs/GaSb structures were grown for electron mobilitytests, obtaining (unintentional) 2D electron gas densities in the order of9/5x10e12 cm(e-2) and mobilities up to 1.2/1.8x10e4 cm(e2)/Vs at room andliquid nitrogen temperature respectively. We show that it is beneficial to havesome hydrogen in the carrier gas mixture for GaSb growth to achieve goodcrystal quality, morphology and electrical properties. Furthermore, anunexpected and previously unreported decomposition process of GaSb is observedat relatively low growth temperatures under the supply of the precursors forInAs epitaxial overgrowth. This nevertheless gets suppressed at even lowergrowth temperatures.

Issues related to the usage of nitrogen as carrier gas for the MOVPE growth of GaSb/InAs heterostructures on InAs pseudosubstrates