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The operating principle and performances of the Multi-layer Thick GaseousElectron Multiplier (M-THGEM) is presented. The M-THGEM is a novel hole-typegaseous electron multiplier produced by multi-layer printed circuit boardtechnology; it consists of a densely perforated assembly of multiple insulatingsubstrate sheets (e.g., FR-4), sandwiched between thin metallic-electrodelayers. The electron avalanche processes occur along the successivemultiplication stages within the M-THGEM holes, under the action of strongdipole fields resulting from the application of suitable potential differencesbetween the electrodes. The present work focuses on investigation of twodifferent geometries: a two-layer M-THGEM (either as single or double-cascadedetector) and a single three-layer M-THGEM element, tested in variouslow-pressure He-based gas mixtures. The intrinsically robust confinement of theavalanche volume within the M-THGEM holes provides an efficient suppression ofthe photon-induced secondary effects, resulting in a high-gain operation over abroad pressure range, even in pure noble gas. The operational principle, mainproperties (maximum achievable gain, long-term stability, energy resolution,etc.) under different irradiation conditions, as well as capabilities andpotential applications are discussed.

Multi-layer Thick Gas Electron Multiplier (M-THGEM): a new MPDG structure for high-gain operation at low-pressure