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Two-dimensional (2D) layered materials, transition metal dichalcogenides andblack phosphorus, have attracted much interest from the viewpoints offundamental physics and device applications. The establishment of newfunctionalities in anisotropic layered 2D materials is a challenging butrewarding frontier, owing to their remarkable optical properties and prospectsfor new devices. Here, we report the anisotropic optical properties of layered2D monochalcogenide of germanium sulfide (GeS). Three Raman scattering peakscorresponding to the B3g, A1g, and A2g modes with strong polarizationdependence are demonstrated in the GeS flakes, which validates polarized Ramanspectroscopy as an effective method for identifying the crystal orientation ofanisotropic layered GeS. Photoluminescence (PL) is observed with a peak ataround 1.66 eV that originates from the direct optical transition in GeS atroom temperature. Moreover, determination of the polarization dependentcharacteristics of the PL and absorption reveals an anisotropic opticaltransition near the band edge of GeS, which is also supported by the densityfunctional theory calculations. This anisotropic layered GeS presents theopportunities for the discovery of new physical phenomena and will findapplications that exploit its anisotropic properties.

Anisotropic Optical Properties of Layered Germanium Sulfide