English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Plus monthly

Global: Zendy Tools annual

Global: Zendy Tools monthly

Global: Zendy Free Plan

We propose a spintronic metal oxide semiconductor field effect transistor(spin MOSFET) where a spin gapless semiconductor (SGS) constitutes the channeland the drain is a ferromagnetic metal. SGS exhibit a non-zero band gap in onlyone of the spin sub-bands and feature complete spin polarization at finitetemperature. We present an analytical model of the device and comment theproperties relevant for devices applications. Our results boost SGS as a newparadigm for the spin MOSFET concept.

Proposal for a spin MOSFET based on spin gapless semiconductors