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This study provides a new insight into the processes which occur when thinfilm hydrogenated amorphous silicon is subjected to UV laser irradiation in thepresence of oxygen. It achieves this by observing the effects of subjecting thefilms to progressively increasing laser radiation doses. This reveals that anarray of nuclei is first created, leading to the formation of a well-definedcrystalline network, consistent with the structure of silicon oxide. Furtherirradiation results in the formation of cone-like structures on the crystallinenetwork, due to silicon-oxygen bond breakage and migration of the resultantsilicon-rich material. Eventually the cone-like structures become the dominantfeatures, but remain interconnected by nanowire remnants of the originalcrystalline structure.

The formation of well-defined crystalline structures by UV laser irradiation of amorphous silicon films