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Space Charge Limited Current (SCLC) based conduction has been identified forPCMO-based RRAM devices based on the observation that $I \propto V^{\alpha}$where $\alpha \approx 2$. A critical feature of the IV characteristics is asharp rise in current ($\alpha \gg 2$) which has been widely attributed totrap-filled limit (TFL) followed by an apparent trap-free SCLC conduction. Inthis paper, we show by TCAD analysis that trap-filled limit (TFL) isinsufficient to explain the sharp current rise ($\alpha \gg 2$). As analternative, we propose a shallow trap SCLC model with selfheating effect basedthermal runaway to explain the sharp current rise followed by a seriesresistance dominated regime. Experimental results over a range of25{\deg}C-125{\deg}C demonstrate all 4 regimes (i) Ohmic ($\alpha = 1$), (ii)shallow trap SCLC ($\alpha \approx 2$), (iii) current shoot up ($\alpha \gg 2$)and (iv) series resistance ($\alpha = 1$). Further, TCAD simulations withthermal modeling are able to match the experimental IV characteristics in allthe regimes. Thus, a current conduction mechanism in PCMO-based RRAM supportedby detailed TCAD model is presented. Such a model is essential for furtherquantitative understanding and design for PCMO-based RRAM.

Space Charge Limited Current with Self-heating in Pr$_{0.7}$Ca$_{0.3}$MnO$_3$ based RRAM