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Structural, interfacial, optical, and transport properties of large-area MoS2ultra-thin films on BN-buffered silicon substrates fabricated using magnetronsputtering are investigated. A relatively simple growth strategy isdemonstrated here that simultaneously promotes superior interfacial and bulkMoS2 properties. Few layers of MoS2 are established using X-ray reflectivity,diffraction, ellipsometry, and Raman spectroscopy measurements. Layer-specificmodeling of optical constants shows very good agreement with first-principlescalculations. Conductivity measurements reveal that few-layer MoS2 films aremore conducting than many-layer films. Photo-conductivity measurements revealthat the sputter deposited MoS2 films compare favorably with other large-areamethods. Our work illustrates that sputtering is a viable route for large-areadevice applications using transition metal dichalcogenides.

Viable route towards large-area two dimensional MoS2 using magnetron sputtering