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The asymmetric peak at 212 - 218 cm-1 occurring in InAs micro-nano wires isinvestigated using spatially resolved Raman spectroscopy (SRRS) of uniform,bent and long tapered MNWs grown on a Si (001) substrate. It is attributed tosuperposition of E2h phonon (wurtzite : WZ) and TO phonon (zinc blende : ZB) ofInAs. Polarized and wavelength dependent SRRS establishes the presence of WZand ZB phases in these MNWs. However, formation of WZ phase for larger diameterInAs MNWs is not commensurate with existing growth mapping studies, which needsto be understood further. Study of several of these MNWs suggest that thefraction of WZ to ZB in a MNW is decided not only by diameter, but also bylocal growth seeding/conditions leading to either tapered or uniform MNWsformation, although, external growth conditions are same. Variation of thesefrequencies that from bulk value are correlated to residual stress generated inZB and WZ phases due to presence of WZ and ZB phases, respectively.Consistently, temperature dependent Raman data shows that there is a measurablecontribution of stress to dw/dT, a positive for ZB and negative for WZ phonons,due to difference in their thermal expansions. Further, effective thermalexpansion coefficient of WZ InAs in presence of ZB phase is calculated to varyin the range 10 - 19 x 10-6/K from base to tip of a MNW at 80 K, which is notpossible to determine otherwise.

Spatially resolved Raman spectroscopy study of uniform and tapered InAs micro-nano wires: Correlation of strain and polytypism