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In this study, we investigated the effect of spacer and buffer layers on theblocking temperature TB of the perpendicular exchange bias of thin Cr2O3 films,and revealed a high TB of 260 K for 20-nm-thick Cr2O3 thin films. By insertinga Ru spacer layer between the Cr2O3 and Co films and changing the spacerthickness, we controlled the magnitude of the exchange bias and TB. Bycomparing the TB values of the 20-nm-thick Cr2O3 films on Pt and alpha-Fe2O3buffers, we investigated the lattice strain effect on the TB. We show thathigher TB value can be obtained using an alpha-Fe2O3 buffer, which is likelybecause of the lattice-strain-induced increase of Cr2O3 magnetic anisotropy.

Enhancing the blocking temperature of perpendicular-exchange biased Cr2O3 thin films using spacer and buffer layers