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In this work we present silicon process compatible, stable and reliable($>10^{8}$cycles), high non-linearity ratio at half-read voltage ($>5\times10^{5}$), high speed ($<60ns$) low operating voltage ($<2V$) back-to-backSchottky diodes. Materials choice of electrode, thickness of semiconductorlayer and doping level are investigated by numerical simulation, experimentsand current-voltage equations to give a general design consideration whenback-to-back Schottky diodes are used as selector device for Resistive RandomAccess Memory(RRAM) arrays.

Highly Non-linear and Reliable Amorphous Silicon Based Back-to-Back Schottky Diode as Selector Device for Large Scale RRAM Arrays