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Gallium Arsenide and related compound semiconductors lie at the heart ofoptoelectronics and integrated laser technologies. Shaped at the micro andnano-scale, they allow strong interaction with quantum dots and quantum wells,and promise to result in stunning devices. However gallium arsenide opticalstructures presently exhibit lower performances than their silicon-basedcounterparts, notably in nanophotonics where the surface plays a chief role.Here we report on advanced surface control of miniature gallium arsenideoptical resonators, using two distinct techniques that produce permanentresults. One leads to extend the lifetime of free-carriers and enhanceluminescence, while the other strongly reduces surface absorption originatingfrom mid-gap states and enables ultra-low optical dissipation devices. Withsuch surface control, the quality factor of wavelength-sized optical diskresonators is observed to rise up to six million at telecom wavelength, greatlysurpassing previous realizations and opening new prospects for Gallium Arsenidenanophotonics.

Surface-enhanced gallium arsenide photonic resonator with a quality factor of six million