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Applicability of dilute magnetic semiconductors (DMS) in electronic devicesrelies upon the understanding and control of their magnetic anisotropy. Thispaper explores one of the ways in engineering magnetic anisotropy in epitaxiallayers of DMS by forming them into magnonic structures. For this purpose thecanonical ferromagnetic DMS, namely (Ga,Mn)As, is employed. The anti-dotsystems based on (Ga,Mn)As layers of various thicknesses are fabricated withfocused ion beam apparatus and studied by means of microscopy as well asmagnetometry. The magnetometric data - collected along two nonequivalentin-plane crystallographic directions of (Ga,Mn)As: [110] and [1-10] - shows theeffect of structuring on high-field magnetization process, whereas nosignificant change of the width of hysteresis loop in anti-dot samples isobserved.

Magnetization Saturation Process in the Magnonic Anti-dot Structures Based on (Ga,Mn)As: A Magnetometric Study