English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Plus monthly

Global: Zendy Tools annual

Global: Zendy Tools monthly

Global: Zendy Free Plan

Al/ maleic anhydride (MA) /p-Si organic Schottky devices were fabricated on ap-Si semiconductor wafer by spin coating. The frequency and voltage dependentdielectric constant of Al/MA/p-Si have been investigated. Dielectric propertiesand electrical conductivity of contact structures have been investigated indetail by using spectroscopic technique in a wide range of frequencies andapplied bias voltages at room temperature. The values of dielectric constant,dielectric loss, dielectric loss tangent, real and imaginary parts of theelectrical modulus and ac electrical conductivity were found considerablysensitive to frequency and applied bias voltage especially in depletion andaccumulation regions. Experimental results indicate that the values ofdielectric constant show a steep decrease with increasing frequency for eachvoltage. The values of dielectric loss as a function of voltage show a jump,and dielectric loss decreases with decreasing voltage and increasing frequency.The weak increasing of the ac electrical conductivity on frequency is observed.The real part of electric modulus increases with increasing frequency. Also,the imaginary part of electric modulus shows a peak and the peak positionshifts to higher frequency with increasing applied voltage. It can be concludedthat the interfacial polarization can be more easily occurred at lowfrequencies and the majority of interface states at metal semiconductorinterface contributes to deviation of dielectric properties of Al/MA/p-Sistructures.

Frequency dependent dielectric properties of Al/ maleic anhydride (MA) /p-Si structures