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Many exotic physics anticipated in topological insulators require a gap to beopened for their topologica surface states by breaking time reversal symmetry.The gap opening has been achieved by doping magnetic impurities, which howeverinevitably create extra carriers and disorder that undermine the electronictransport. In contrast, the proximity to a ferromagnetic/ferrimagneticinsulator may improve the device quality, thus promises a better way to openthe gap while minimizing the side-effects. Here, we grow thin single-crystalSb1.9Bi0.1Te3 micro flakes on insulating ferrimagnet BaFe12O19 by using the vander Waals epitaxy technique. The micro flakes show a negative magnetoresistancein weak perpendicular fields below 50 K, which can be quenched by increasingtemperature. The signature implies the weak localization effect as its origin,which is absent in intrinsic topological insulators, unless a surface state gapis opened. The surface state gap is estimated to be 10 meV by using the theoryof the gap-induced weak localization effect. These results indicate that themagnetic proximity effect may open the gap for the topological surface attachedto BaM insulating ferrimagnet. This heterostructure may pave the way for therealization of new physical effects as well as the potential applications ofspintronics devices.

Weak localization effect in topological insulator micro flakes grown on insulating ferrimagnet BaFe12O19