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We report results of investigation of the current-carrying capacity ofnanowires made from the quasi-1D van der Waals metal tantalum triselenidecapped with quasi-2D boron nitride. The chemical vapor transport methodfollowed by chemical and mechanical exfoliation were used to fabricate mm-longTaSe3 wires with lateral dimensions in the 20 to 70 nm range. Electricalmeasurements establish that TaSe3/h-BN nanowire heterostructures have abreakdown current density exceeding 10 MA/cm2 - an order-of-magnitude higherthan that in copper. Some devices exhibited an intriguing step-like breakdown,which can be explained by the atomic thread bundle structure of the nanowires.The quasi-1D single crystal nature of TaSe3 results in low surface roughnessand the absence of grain boundaries; these features potentially can enable thedownscaling of these wires to lateral dimensions in the few-nm range. Theseresults suggest that quasi-1D van der Waals metals have potential forapplications in the ultimately downscaled local interconnects.

Breakdown Current Density in BN-Capped Quasi-1D TaSe3 Metallic Nanowires: Prospects of Interconnect Applications