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While two-dimensional topological insulators (2D TI) initiated the field oftopological materials, only very few materials were discovered to date and thedirect access to their quantum spin Hall edge states has been challenging dueto material issues. Here, we introduce a new 2D TI material, Sb few layerfilms. Electronic structures of ultrathin Sb islands grown on Bi2Te2Se areinvestigated by scanning tunneling microscopy. The maps of local density ofstates clearly identify robust edge electronic states over the thickness ofthree bilayers in clear contrast to thinner islands. This indicates thetopological edge states emerged through a 2D topological phase transitionpredicted between three and four bilayer films in recent theory. Thenon-trivial phase transition and edge states are confirmed for epitaxial filmsby extensive density-functional-theory calculations. This work provides animportant material platform to exploit miscroscopic aspects of the quantum spinHall phase and its quantum phase transition.

Topological phase transition and quantum spin Hall edge states of antimony few layers