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We have been developing X-ray SOI pixel Sensors, called "XRPIX", for futureX-ray astronomy satellites that enable us to observe in the wide energy band of0.5-40 keV. Since XRPIXs have the circuitry layer with a thickness of about 8{\mu}m in the front side of the sensor, it is impossible to detect low energyX-rays with a front-illuminated type. So, we have been developingback-illuminated type of XRPIX with a less 1 {\mu}m dead layer in theback-side, which enables the sensitivity to reach 0.5 keV. We produced twotypes of back-side illuminated (BI) XRPIXs, one of which is produced in "Pizzaprocess" which LBNL developed and the other is processed in the ionimplantation and laser annealing. We irradiated both of the BI-XRPIXs with softX-ray and investigate soft X-ray performance of them. We report results fromsoft X-ray evaluation test of the device.

X-ray Performance of Back-Side Illuminated Type of Kyoto's X-ray Astronomical SOI Pixel Sensor, XRPIX